IPD50N04S308ATMA1

DPAK N-CH 40V 50A

表面贴装型 N 通道 50A（Tc） 68W（Tc） PG-TO252-3

得捷:
IPD50N04 - 20V-40V N-CHANNEL AUT

立创商城:
IPD50N04S308ATMA1

艾睿:
This IPD50N04S308ATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 68000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 40V 50A 3-Pin2+Tab TO-252

Verical:
Trans MOSFET N-CH 40V 50A Automotive 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 40V 50A TO252-3 / N-Channel 40 V 50A Tc 68W Tc Surface Mount PG-TO252-3-11