APT40GR120B2D30

功率半导体功率模块射频功率MOSFET Power Semiconductors Power Modules RF Power MOSFETs

The IGBT transistor from is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 500000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.