APT45GR65B

Trans IGBT Chip N-CH 650V 118A 543000mW 3Pin3+Tab TO-247

Use the IGBT transistor from as an electronic switch. Its maximum power dissipation is 543000 mW. It has a maximum collector emitter voltage of 650 V. It is made in a single configuration. This device utilizes npt technology. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.