VND10N06TR-E

VND10N06 单通道 低边 自保护 60 V 10 A 0.3 Ohm 功率MOSFET-TO-252-3

Description

The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Logic level input threshold

■ ESD protection

■ Schmitt trigger on input

■ High noise immunity