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VND10N06-E

电源负载分配开关, 低压侧, 60 V输入, 10 A, 0.15 ohm, 1输出, TO-252-3

Description

The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Logic level input threshold

■ ESD protection

■ Schmitt trigger on input

■ High noise immunity

VND10N06-E PDF数据文档
图片 型号 厂商 下载
VND10N06-E ST Microelectronics 意法半导体
VND1NV04TR-E ST Microelectronics 意法半导体
VND1NV04-E ST Microelectronics 意法半导体
VND1NV04 ST Microelectronics 意法半导体
VND1NV04-1-E ST Microelectronics 意法半导体
VND1NV04-1 ST Microelectronics 意法半导体
VND1NV0413TR ST Microelectronics 意法半导体
VND10N06-1-E ST Microelectronics 意法半导体
VND10N06TR-E ST Microelectronics 意法半导体
VND10N0613TR ST Microelectronics 意法半导体
VND10N06-1 ST Microelectronics 意法半导体