FQB22P10TM

FAIRCHILD SEMICONDUCTOR  FQB22P10TM  晶体管, MOSFET, P沟道, -22 A, -100 V, 96 mohm, -10 V, -4 V

The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.

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100% Avalanche tested

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40nC Typical low gate charge

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160pF Typical low Crss