FQB27P06TM

FAIRCHILD SEMICONDUCTOR  FQB27P06TM  晶体管, MOSFET, P沟道, -27 A, -60 V, 0.055 ohm, -10 V, -4 V

The is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using "s proprietary, planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.

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Low gate charge

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100% Avalanche tested

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175°C Rated junction temperature