MPSA06RLG

放大器晶体管 Amplifier Transistors

Look no further than "s NPN general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V.