2N3716

Power Bipolar Transistor, 10A IC, 80V VBRCEO, 1Element, NPN, Silicon, TO-3, Metal, 2Pin, TO-3, 2Pin

Use this versatile NPN GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.