FSB649

NPN低饱和晶体管 NPN Low Saturation Transistor

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 35V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 25V 集电极连续输出电流ICCollector CurrentIC| 3A 截止频率fTTranstion FrequencyfT| 150MHz 直流电流增益hFEDC Current GainhFE| 100~300 管压降VCE（sat）Collector-Emitter Saturation Voltage| 600mV/0.6V 耗散功率PcPower Dissipation| 500mW/0.5W Description & Applications| NPN Low Saturation Transistor high current gain 描述与应用| NPN低饱和 高电流增益