MRFE8VP8600HSR5

140W Avg. over 470-870MHz, 50V RF Power LDMOS Transistor

Overview

The MRFE8VP8600H and MRFE8VP8600HS high power transistors are designed for use in UHF TV broadcast applications. The devices have an integrated input matching network for better power distribution and are ideal for use in both analog and digital TV transmitters.

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## Features

* Excellent thermal characteristics

* High gain for reduced PA size

* High efficiency for Class AB and Doherty operations

* Integrated input matching and unmatched output

* Extended negative gate-gource voltage range of -6 Vdc to +10 Vdc

* RoHS compliant

## Features RF Performance Tables

### DBV-T Broadband Class AB Performance

VDD = 50 Vdc, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.

.

*Signal Type** | **Pout

W

.

* | **f

MHz

.

* | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

*

\---|---|---|---|---|---

DVB-T 8k OFDM | 140 Avg. | 474| 20.2| 29.7| 8.9

610| 20.7| 34.5| 8.2

810| 20.0| 34.0| 8.4

### Load Mismatch/Ruggedness

**Frequency

MHz

.

* | **Signal Type** | **VSWR** | **Pout

W

.

* | **Test

Voltage

.

* | **Result**

\---|---|---|---|---|---

860 | DVB-T 8k OFDM | 20:1 at all

Phase Angles | 125

3 dB Overdrive | 50 | No Device

Degradation