STD4NK60ZT4

STMICROELECTRONICS  STD4NK60ZT4  功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 2.3 V

N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics

立创商城:
N沟道 600V 4A

得捷:
MOSFET N-CH 600V 4A DPAK

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STD4NK60ZT4, 4 A, Vds=600 V, 3引脚 DPAK TO-252封装

e络盟:
功率场效应管, MOSFET, N沟道, 600 V, 4 A, 2 ohm, TO-252 DPAK, 表面安装

艾睿:
Use STMicroelectronics&s; STD4NK60ZT4 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 70000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device utilizes supermesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 600V 4A 3-Pin2+Tab DPAK T/R

富昌:
STD4NK60Z Series 600 V 2 Ohm 4 A N-Channel SuperMesh Power MosFet - TO-252

TME:
Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; DPAK

Verical:
Trans MOSFET N-CH 600V 4A 3-Pin2+Tab DPAK T/R

Newark:
Power MOSFET, N Channel, 4 A, 600 V, 2 ohm, 10 V, 2.3 V

儒卓力:
**MOSFET 600V 2Ohm 2A TO252 **

力源芯城:
600V,2Ω,4A,N沟道功率MOSFET

Win Source:
MOSFET N-CH 600V 4A DPAK