JANTX2N6213

PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR

Look no further than "s PNP general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 3000 mW. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.