SI4410BDY-T1-E3
VISHAY SI4410BDY-T1-E3 场效应管, MOSFET, N沟道, 整卷
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
贸泽:
MOSFET 30V 10A 2.5W
艾睿:
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R
安富利:
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R
富昌:
单 N 沟道 30 V 0.0135 Ohms 表面贴装 功率 Mosfet - SOIC-8
Verical:
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R
Newark:
# VISHAY SI4410BDY-T1-E3 MOSFET Transistor, N Channel, 10 A, 30 V, 20 mohm, 4.5 V, 1 V