SI4410BDY-T1-E3

VISHAY  SI4410BDY-T1-E3  场效应管, MOSFET, N沟道, 整卷

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

贸泽:
MOSFET 30V 10A 2.5W

艾睿:
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R

安富利:
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R

富昌:
单 N 沟道 30 V 0.0135 Ohms 表面贴装 功率 Mosfet - SOIC-8

Verical:
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4410BDY-T1-E3  MOSFET Transistor, N Channel, 10 A, 30 V, 20 mohm, 4.5 V, 1 V