APT25GT120BRDQ2G

功率半导体功率模块 Power Semiconductors Power Modules

The IGBT transistor from is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 347000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.