锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

L6395DTR

半桥 IGBT MOSFET 灌:290mA 拉:430mA

半桥 栅极驱动器 IC 非反相 8-SO


立创商城:
半桥 IGBT MOSFET 灌:290mA 拉:430mA


得捷:
IC GATE DRVR HALF-BRIDGE 8SO


艾睿:
Use the L6395DTR power driver from STMicroelectronics to turn on and off your high-power transistors! This device has a maximum propagation delay time of 200 ns and a maximum power dissipation of 800 mW. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.


安富利:
MOSFET DRVR 0.43A 2-OUT Hi/Lo Side Non-Inv 8-Pin SO T/R


富昌:
L6395D N-Channel 10 - 20 Vs 600 Vout 800kHz High / Low Side Driver - SOIC-8


Chip1Stop:
Driver 600V 0.43A 2-OUT Hi/Lo Side Non-Inv 8-Pin SO N T/R


Verical:
Driver 600V 0.43A 2-OUT High and Low Side Non-Inv 8-Pin SO N T/R


儒卓力:
**HaBr MOSvIGBTDr 600V SO-8 SMD **


L6395DTR PDF数据文档
图片 型号 厂商 下载
L6395DTR ST Microelectronics 意法半导体
L6398DTR ST Microelectronics 意法半导体
L6398D ST Microelectronics 意法半导体
L6395D ST Microelectronics 意法半导体
L6393D ST Microelectronics 意法半导体
L6390DTR ST Microelectronics 意法半导体
L6392DTR ST Microelectronics 意法半导体
L6391D ST Microelectronics 意法半导体
L6392D ST Microelectronics 意法半导体
L6391DTR ST Microelectronics 意法半导体
L6393DTR ST Microelectronics 意法半导体