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L6398DTR

L6398 系列 双 290 mA 20 V 高压侧和低压侧 驱动器 - SOIC-8

半桥 栅极驱动器 IC 反相,非反相 8-SO


得捷:
IC GATE DRVR HALF-BRIDGE 8SO


立创商城:
半桥 IGBT MOSFET 灌:290mA 拉:430mA


艾睿:
Drive a high voltage and high current line with a transistor a certain way with this L6398DTR power driver manufactured by STMicroelectronics. This device has a maximum propagation delay time of 200 ns and a maximum power dissipation of 800 mW. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.


安富利:
MOSFET DRVR 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SO N T/R


富昌:
L6398 Series Dual 290 mA 20 V 120 Ohm High and Low Side Driver - SOIC-8


Chip1Stop:
Driver 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SO N T/R


Verical:
Driver 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SO N T/R


儒卓力:
**HaBr MOSvIGBTDr 600V SO-8 SMD **


力源芯城:
高压高边和低边驱动


L6398DTR PDF数据文档
图片 型号 厂商 下载
L6398DTR ST Microelectronics 意法半导体
L6398D ST Microelectronics 意法半导体
L6395D ST Microelectronics 意法半导体
L6393D ST Microelectronics 意法半导体
L6390DTR ST Microelectronics 意法半导体
L6392DTR ST Microelectronics 意法半导体
L6391D ST Microelectronics 意法半导体
L6392D ST Microelectronics 意法半导体
L6395DTR ST Microelectronics 意法半导体
L6391DTR ST Microelectronics 意法半导体
L6393DTR ST Microelectronics 意法半导体