PD84002
STMICROELECTRONICS PD84002 晶体管, 射频FET, 25 V, 2 A, 6 W, 1 GHz, SOT-89
The is a 25V N-channel Enhancement Mode Lateral Field Effect RF Power Transistor designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. Its superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID reader.
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- Excellent thermal stability
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- Common source configuration
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- ESD protection
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- High peak power
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- High ruggedness capability
ESD sensitive device, take proper precaution while handling the device.