ZXTN19020DZTA

双极晶体管 - 双极结型晶体管BJT NPN 20V HIGH GAIN

ZXTN19020DZ Series NPN 20 V 7.5 A High Gain Power Transistor SMT - SOT-89-3

立创商城:
NPN 20V 7.5A

得捷:
TRANS NPN 20V 7.5A SOT89-3

贸泽:
双极晶体管 - 双极结型晶体管BJT NPN 20V HIGH GAIN

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ZXTN19020DZTA GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN 20V 7.5A 4-Pin3+Tab SOT-89 T/R

Verical:
Trans GP BJT NPN 20V 7.5A Automotive 4-Pin3+Tab SOT-89 T/R

Win Source:
TRANS NPN 20V 7.5A SOT89