IPD50R280CEATMA1

INFINEON  IPD50R280CEATMA1  晶体管, MOSFET, N沟道, 13 A, 550 V, 0.25 ohm, 13 V, 3 V

The IPD50R280CE is a CoolMOS™ N-channel CE Power MOSFET optimized to meet highest efficiency standards. The new series provides all benefits of a fast switching Super-junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

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Reduced energy stored in output capacitance Eoss

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High body diode ruggedness

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Reduced reverse recovery charge Qrr

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Reduced gate charge Qg

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Easy control of switching behaviour

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Cost attractive alternative compared to standard MOSFETs

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Outstanding quality and reliability of CoolMOS™ technology

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Extremely low losses due to very low FOM Rison Qg and Eoss

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Very high commutation ruggedness

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Easy to use/drive

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Halogen-free

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Qualified for standard grade applications

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.