SIHA12N60E-E3
VISHAY SIHA12N60E-E3 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, PFC power supplies, adaptors, TV, game console and ATX power supply applications.
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- Low figure-of-meritFOM RON x Qg
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- Low input capacitance CISS
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- Reduced switching and conduction losses
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- Ultra low gate charge
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- Avalanche energy rated