SI3443DV

FAIRCHILD SEMICONDUCTOR  SI3443DV  晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV

The is a 2.5V specified P-channel MOSFET produced using "s advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small foot-print for applications where the larger packages are impractical.

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Fast switching speed

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High performance Trench technology for extremely low RDS ON

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7.2nC Typical low gate charge