DE375-102N12A
IXYS RF DE375-102N12A 晶体管, 射频FET, 1 kV, 12 A, 940 W, 50 MHz, DE-375
RF Power MOSFET
♦ N-Channel Enhancement Mode
♦ Low Qgand Rg
♦ High dv/dt
♦ Nanosecond Switching
♦ 50MHz Maximum Frequency
Features
• Isolated Substrate
− high isolation voltage >2500V
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced low Qgprocess
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDSon
• Very low insertion inductance <2nH
• No beryllium oxide BeO or other haz ardous materials
Advantages
• Optimized for RF and high speed switching at frequencies to 50MHz
• Easy to mountóno insulators needed
• High power density
