DE375-102N10A

N-CH 1000V 10A

RF Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Low Qgand Rg

High dv/dt

Nanosecond Switching

Features

• Isolated Substrate

− high isolation voltage >2500V

− excellent thermal transfer

− Increased temperature and power cycling capability

• IXYS advanced low Qgprocess

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDSon

• Very low insertion inductance <2nH

• No beryllium oxide BeO or other hazardous materials

Advantages

• Optimized for RF and high speed switching at frequencies to 50MHz

• Easy to mountóno insulators needed

• High power density