IXTA76P10T

TO-263AA P-CH 100V 76A

表面贴装型 P 通道 76A（Tc） 298W（Tc） TO-263（IXTA）

得捷:
MOSFET P-CH 100V 76A TO263

艾睿:
As an alternative to traditional transistors, the IXTA76P10T power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 298000 mW. This device utilizes trenchp technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET P-CH 100V 76A 3-Pin2+Tab TO-263AA

Verical:
Trans MOSFET P-CH 100V 76A 3-Pin2+Tab TO-263AA

DeviceMart:
MOSFET P-CH 100V 76A TO-263