FDS9953A

FAIRCHILD SEMICONDUCTOR  FDS9953A  双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V

The is a PowerTrench® dual P-channel MOSFET rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings 4.5V to 20V. It is suitable for load-switch and battery protection applications.

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Fast switching speed

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Low gate charge

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability

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±25V Gate to source voltage

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±2.9A Continuous drain current

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±10A Pulsed drain current