FDS9953A
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDS9953A 双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V
The is a PowerTrench® dual P-channel MOSFET rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings 4.5V to 20V. It is suitable for load-switch and battery protection applications.
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- Fast switching speed
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- ±25V Gate to source voltage
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- ±2.9A Continuous drain current
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- ±10A Pulsed drain current