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FDA16N50

500V N沟道MOSFET 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

FDA16N50 PDF数据文档
图片 型号 厂商 下载
FDA16N50 Fairchild 飞兆/仙童
FDA18N50 Fairchild 飞兆/仙童
FDA16N50LDTU Fairchild 飞兆/仙童
FDA16N50_F109 Fairchild 飞兆/仙童
FDA1254-H-1R2M=P3 muRata 村田
FDA1254-H-1R0M=P3 muRata 村田
FDA1254-H-4R7M=P3 muRata 村田
FDA1254-H-3R3M=P3 muRata 村田
FDA1055-H-2R2M=P3 muRata 村田
FDA16N50-F109 ON Semiconductor 安森美
FDA15N65 Fairchild 飞兆/仙童