SIR640DP-T1-GE3

VISHAY SIR640DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0014 ohm, 10 V, 1 V

The is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for secondary side synchronous rectification and DC-to-DC converter applications.

.: 100% Rg tested

.: 100% UIS tested

.: Low Qg for high efficiency

.: Halogen-free

.: -55 to 150°C Operating temperature range

SIR640DP-T1-GE3替代型号 SIR640DP-T1-GE3详细参数

SIR640DP-T1-GE3 PDF数据文档

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