SI5402BDC-T1-E3

VISHAY  SI5402BDC-T1-E3  晶体管, MOSFET, N沟道, 4.9 A, 30 V, 0.029 ohm, 10 V, 20 V

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.

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-55 to 150°C Operating temperature range

艾睿:
Trans MOSFET N-CH 30V 4.9A 8-Pin Chip FET T/R

Allied Electronics:
N-CHANNEL 30-V D-S MOSFET