SI5475DDC-T1-GE3
VISHAY SI5475DDC-T1-GE3 晶体管, MOSFET, P沟道, -6 A, -12 V, 26 mohm, -4.5 V, -400 mV
The is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
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- Halogen-free
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- -55 to 150°C Operating temperature range
贸泽:
MOSFET 12V 6.0A 5.7W 32mohm @ 4.5V
e络盟:
VISHAY SI5475DDC-T1-GE3 晶体管, MOSFET, P沟道, -6 A, -12 V, 26 mohm, -4.5 V, -400 mV
艾睿:
Trans MOSFET P-CH 12V 6A 8-Pin Chip FET T/R
安富利:
Trans MOSFET P-CH 12V 6A 8-Pin Chip FET T/R
富昌:
p 沟道 12 V 0.032 Ohm 表面贴装 功率 Mosfet - ChipFET-1206-8
Verical:
Trans MOSFET P-CH 12V 6A 8-Pin Chip FET T/R
Newark:
# VISHAY SI5475DDC-T1-GE3 MOSFET Transistor, P Channel, -6 A, -12 V, 26 mohm, -4.5 V, -400 mV