SI3861BDV-T1-E3

VISHAY  SI3861BDV-T1-E3  场效应管, MOSFET, N+P沟道, 20V, TSOP

DESCRIPTION

The Si3861BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3861DV operates on supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.

FEATURES

 4.5-V Rated

 ESD Protected: 3000 V

 105-mLow rDSonTrenchFET

 4.5 to 20-V Input

 1.5 to 8 -V Logic Level Control

 Low Profile, Small Footprint TSOP-6 Package

 3000-V ESD Protection On Input Switch, VON/OFF

 Adjustable Slew-Rate