SCS220KE2HR

ROHM  SCS220KE2HR  二极管, 碳化硅肖特基, AEC-Q101 1200V系列, 双共阴极, 1.2 kV, 20 A, 34 nC, TO-247

The is a silicon carbide epitaxial planer SiC Schottky Barrier Diode features high speed switching, reduced temperature dependence and shorter recovery time.

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Reduced switching loss

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175°C Junction temperature

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AEC-Q101 qualified

This product is available for evaluation and design in. Please contact your local ROHM office when planning to approve this device.