FDZ206P

P沟道2.5V指定的PowerTrench P-Channel 2.5V Specified PowerTrench

Combining s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the minimizes both PCB space and R

DSON

. This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R

DSON

.

Product Highlights

-13 A, -20 V

R

DSon

= 9.5 m

W

@ V

GS

= -4.5 V

R

DSon

= 14.5 m

W

@ V

GS

= -2.5 V