SIA427DJ-T1-GE3

VISHAY  SIA427DJ-T1-GE3  晶体管, MOSFET, P沟道, -12 A, -8 V, 0.037 ohm, -1.2 V, 350 mV

The is a 8VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.

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New thermally enhanced PowerPAK® package

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Small footprint area

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Low ON-resistance

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100% Rg tested

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Halogen-free

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-55 to 150°C Operating temperature range