SIA416DJ-T1-GE3

VISHAY  SIA416DJ-T1-GE3  晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V

The is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC converter, full-bridge converter, power bricks and POL power applications.

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100% Rg tested

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100% UIS tested

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Halogen-free

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-55 to 150°C Operating temperature range