BSZ22DN20NS3GATMA1

INFINEON  BSZ22DN20NS3GATMA1  晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ22DN20NS3GATMA1, 7 A, Vds=200 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 200V 7A 8TSDSON

立创商城:
N沟道 200V 7A

贸泽:
MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 200 V, 7 A, 0.194 ohm, TSDSON, 表面安装

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; BSZ22DN20NS3GATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 34000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP

TME:
Transistor: N-MOSFET; unipolar; 200V; 7A; 34W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ22DN20NS3GATMA1  MOSFET Transistor, N Channel, 7 A, 200 V, 0.194 ohm, 10 V, 3 V