PMV60EN

NXP  PMV60EN  晶体管, MOSFET, N沟道, 4.7 A, 30 V, 55 mohm, 10 V, 2 V

The is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™ technology. It is suitable for use in battery management and high speed switch applications.

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Fast switching

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Surface-mount package

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-55 to 150°C Junction temperature range