IPD220N06L3GBTMA1
单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
OptiMOS™3 功率 MOSFET,60 至 80V
OptiMOS™ 产品提供高性能封装,可处理最具挑战性的应用,在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。
快速切换 MOSFET,用于 SMPS
优化技术,用于直流/直流转换器
符合目标应用的 JEDEC1 规格
N 通道,逻辑电平
极佳的栅极电荷 x R DSon 产品 FOM
极低导通电阻 R DSon
无铅电镀
得捷:
MOSFET N-CH 60V 30A TO252-3
立创商城:
N沟道 60V 30A
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPD220N06L3GBTMA1, 30 A, Vds=60 V, 3引脚 DPAK TO-252封装
e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 30 A, 0.0178 ohm, TO-252 DPAK, 表面安装
艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPD220N06L3GBTMA1 power MOSFET. Its maximum power dissipation is 36000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
Verical:
Trans MOSFET N-CH 60V 30A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 60V 30A TO252-3