SI7905DN-T1-GE3
VISHAY SI7905DN-T1-GE3 双路场效应管, MOSFET, 双P沟道, -6 A, -40 V, 0.048 ohm, -4.5 V, -3 V
The is a dual P-channel MOSFET housed in a surface-mount package. It is suitable for load switch applications.
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- Halogen-free
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- TrenchFET® power MOSFET
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- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
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- 100% Rg and UIS tested