BFR843EL3E6327XTSA1

晶体管 双极-射频, NPN, 2.6 V, 125 mW, 55 mA, 230 hFE

Summary of Features:

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Low noise broadband NPN RF transistor based on ´s reliable, high volume SiGe:C bipolar technology

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High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness

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Unique combination of high RF performance, robustness and ease of application circuit design

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Low noise figure: NFmin = 0.95 dB at 2.4 GHz and 1.05 dB at 5.5 GHz, 1.8 V, 8 mA

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High gain |S21|2 = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA

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OIP3 = 21.5 dBm at 2.4 GHz and 20.5 dBm at 5.5 GHz, 1.8 V, 20 mA

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Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V 2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor

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Low power consumption, ideal for mobile applications

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Pb-free RoHS compliant and halogen free very small thin leadless plastic package

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Qualification report according to AEC-Q101 available