TIG056BF-1E

单晶体管, IGBT, 240 A, 3.6 V, 30 W, 430 V, TO-220F, 3 引脚

IGBT - 通孔 TO-220F-3FS

得捷:
IGBT 430V TO220F-3FS

e络盟:
单晶体管, IGBT, 240 A, 3.6 V, 30 W, 430 V, TO-220F, 3 引脚

艾睿:
Minimize the current at your gate with the TIG056BF-1E IGBT transistor from ON Semiconductor. It has a maximum collector emitter voltage of 430 V. Its maximum power dissipation is 30000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 430V 240A 3-Pin TO-220F-3FS Bulk

Verical:
Trans IGBT Chip N-CH 430V 30000mW Automotive 3-Pin3+Tab TO-220F Tube

Win Source:
IGBT 430V 240A 30W TO-220F-3FS