IXGK100N170

Trans IGBT Chip N-CH 1700V 170A 830000mW 3Pin3+Tab TO-264

Minimize the current at your gate with the IGBT transistor from Ixys Corporation. Its maximum power dissipation is 830000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.

得捷:
IGBT PT 1000V 120A TO-264

艾睿:
Trans IGBT Chip N-CH 1.7KV 170A 3-Pin3+Tab TO-264

Chip1Stop:
Trans IGBT Chip N-CH 1.7KV 170A 3-Pin3+Tab TO-264