功率半导体功率模块 Power Semiconductors Power Modules
Use the IGBT transistor from as an electronic switch. Its maximum power dissipation is 184000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | APT15GT60BRDQ1G | Microsemi 美高森美 | |
 | APT100GT120JU2 | Microsemi 美高森美 | |
 | APT15GN120KG | Microsemi 美高森美 | |
 | APT11GF120BRDQ1G | Microsemi 美高森美 | |
 | APT15GT60KRG | Microsemi 美高森美 | |
 | APT15D100KG | Microsemi 美高森美 | |
 | APT15D60KG | Microsemi 美高森美 | |
 | APT15DQ100KG | Microsemi 美高森美 | |
 | APT15D60K | Microsemi 美高森美 | |
 | APT15DQ120KG | Microsemi 美高森美 | |
 | APT15DQ60BG | Microsemi 美高森美 |
