ZXTN19055DZTA

Trans GP BJT NPN 55V 6A 2100mW Automotive 4Pin3+Tab SOT-89 T/R

- 双极 BJT - 单 NPN 55 V 6 A 200MHz 2.1 W 表面贴装型 SOT-89-3

得捷:
TRANS NPN 55V 6A SOT89-3

立创商城:
NPN 55V 6A

艾睿:
Jump-start your electronic circuit design with this versatile NPN ZXTN19055DZTA GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 55 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Allied Electronics:
Transistor NPN 55V 6A SOT89

安富利:
Trans GP BJT NPN 55V 6A 4-Pin3+Tab SOT-89 T/R

Chip1Stop:
Trans GP BJT NPN 55V 6A 4-Pin3+Tab SOT-89 T/R

Verical:
Trans GP BJT NPN 55V 6A 2100mW 4-Pin3+Tab SOT-89 T/R

Win Source:
TRANS NPN 55V 6A SOT89

DeviceMart:
TRANSISTOR NPN 55V 6A SOT89