TTC5200

TOSHIBA  TTC5200  单晶体管 双极, NPN, 230 V, 30 MHz, 150 W, 15 A, 160 hFE

The from is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification.

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Collector to emitter voltage Vce is 230V

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Collector to base voltage of 230V

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Collector current Ic is 15A

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Power dissipation pd is 150W

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Junction temperature of 150°C

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Current gain of 35 at 7A collector current

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Collector to emitter saturation voltage of 3V

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Collector to emitter breakdown voltage of 230V