TTC5200
数据手册.pdf
Toshiba
东芝
分立器件
TOSHIBA TTC5200 单晶体管 双极, NPN, 230 V, 30 MHz, 150 W, 15 A, 160 hFE
The from is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification.
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- Collector to emitter voltage Vce is 230V
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- Collector to base voltage of 230V
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- Collector current Ic is 15A
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- Power dissipation pd is 150W
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- Junction temperature of 150°C
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- Current gain of 35 at 7A collector current
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- Collector to emitter saturation voltage of 3V
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- Collector to emitter breakdown voltage of 230V
