ZX5T853GTA

双极晶体管 - 双极结型晶体管BJT NPN 100V

Jump-start your electronic circuit design with this versatile NPN GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.