ZXTN4006ZTA

ZXTN4006ZTA 编带

- 双极 BJT - 单 NPN - 表面贴装型 SOT-89-3

得捷:
TRANS NPN 200V 1A SOT89-3

立创商城:
NPN 200V 1A

艾睿:
Implement this NPN ZXTN4006ZTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 7 V.

Allied Electronics:
Trans; NPN; Transistor; GP; 200V 1A SOT89

安富利:
Trans GP BJT NPN 200V 1A 4-Pin3+Tab SOT-89 T/R

Chip1Stop:
Trans GP BJT NPN 200V 1A 4-Pin3+Tab SOT-89 T/R

Verical:
Trans GP BJT NPN 200V 1A 1500mW Automotive 4-Pin3+Tab SOT-89 T/R