2SK3378ENTL-E

硅N沟道MOS场效应管高速开关 Silicon N Channel MOS FET High Speed Switching

Features

•  Low on-resistance

   RDS= 2.7Ω typ. VGS= 10 V, ID= 50 mA

   RDS= 4.7Ω typ. VGS= 4 V, ID= 20 mA

•  4 V gate drive device.

•  Small package CMPAK

立创商城:
2SK3378ENTL-E

得捷:
SMALL SIGNAL N-CHANNEL MOSFET

Win Source:
Silicon N Channel MOS FET High Speed Switching